View IRF634N_1318947.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 8.0 i d @ t c = 100c continuous drain current, v gs @ 10v 5.6 a i dm pulsed drain current ? 32 p d @t c = 25c power dissipation 88 w p d @t a = 25c power dissipation ? 3.8 linear derating factor 0.59 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 110 mj i ar avalanche current ? 4.8 a e ar repetitive avalanche energy ? 8.8 mj dv/dt peak diode recovery dv/dt 7.3 v/ns t j operating junction and -55 to +175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew ? 10 lbf?in (1.1n?m) hexfet ? power mosfet 9/10/01 absolute maximum ratings description v dss = 250v r ds(on) = 0.435 w i d = 8.0a s d g l advanced process technology l dynamic dv/dt rating l 175c operating temperature l fast switching l fully avalanche rated l ease of paralleling l simple drive requirements d 2 pak IRF634Ns to-220ab IRF634N to-262 IRF634Nl IRF634N IRF634Ns IRF634Nl fifth generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial- industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (IRF634Nl) is available for low- profile application. www.irf.com 1 pd - 94310
IRF634N/s/l 2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 4.8a, v gs = 0v ? t rr reverse recovery time CCC 130 200 ns t j = 25c, i f = 4.8a q rr reverse recovery charge CCC 650 980 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 8.0 32 a parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 250 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.33 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 0.435 w v gs = 10v, i d = 4.8a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 5.4 CCC CCC s v ds = 50v, i d = 4.8a ? CCC CCC 25 a v ds = 250v, v gs = 0v CCC CCC 250 v ds = 200v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 34 i d = 4.8a q gs gate-to-source charge CCC CCC 6.5 nc v ds = 200v q gd gate-to-drain ("miller") charge CCC CCC 16 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time CCC 8.4 CCC v dd = 125v t r rise time CCC 16 CCC i d = 4.8a t d(off) turn-off delay time CCC 28 CCC r g = 1.3 w t f fall time CCC 15 CCC v gs = 10v, see fig. 10 ? between lead, CCC CCC 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 620 CCC v gs = 0v c oss output capacitance CCC 84 CCC v ds = 25v c rss reverse transfer capacitance CCC 23 CCC pf ? = 1.0mhz, see fig. 5 nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current thermal resistance parameter typ. max. units r q jc junction-to-case CCC 1.7 r q cs case-to-sink, flat, greased surface ? 0.50 CCC c/w r q ja junction-to-ambient ? CCC 62 r q ja junction-to-ambient (pcb mount) ? CCC 40
IRF634N/s/l www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 4.0 5.0 6.0 7.0 8.0 9.0 v = 50v 20s pulse width ds v , gate-to-source volta g e (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 7.9a
IRF634N/s/l 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 1200 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 4.8a v = 50v ds v = 125v ds v = 200v ds 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 i d , drain-to-source current (a) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
IRF634N/s/l www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) i , drain current (a) c d
IRF634N/s/l 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as 25 50 75 100 125 150 175 0 40 80 120 160 200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 2.0a 3.4a 4.8a r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v v gs
IRF634N/s/l www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
IRF634N/s/l 8 www.irf.com lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) m in 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.0 14) m b a m 4 1 2 3 notes: 1 d ime n s io n in g & to le r a n c in g p e r a n s i y 14.5m , 19 82. 3 o u tlin e c o n f o r m s to je d e c o u t lin e t o -2 20a b . 2 c o n tr o llin g d im e n s io n : in c h 4 h e a t s in k & le a d m e a s u r e m e n t s d o n ot include burrs. to-220ab part marking information to-220ab package outline dimensions are shown in millimeters (inches) example: t his is an irf1010 lot code 1789 as s emble d on ww 19, 1997 in the assembly line "c" int ernational rect if ier logo as s e mb l y lot code part number dat e code year 7 = 1997 we e k 19 line c
IRF634N/s/l www.irf.com 9 d 2 pak package outline d 2 pak part marking information f 530s this is an irf530s with lot code 8024 as s embled on ww 02, 2000 in the assembly line "l" assembly lot code int ernational rectifier logo part number dat e code year 0 = 2000 we e k 02 line l
IRF634N/s/l 10 www.irf.com to-262 part marking information to-262 package outline example: t his is an irl3103l lot code 1789 as s e mb l y part number dat e code we e k 19 line c l ot code ye ar 7 = 1997 as s e mbled on ww 19, 1997 in the assembly line "c" logo rect if ier international
IRF634N/s/l www.irf.com 11 ? repetitive rating; pulse width limited by max. junction temperature. notes: ? starting t j = 25c, l = 9.5mh r g = 25 w , i as = 4.8a,v gs =10v ? pulse width 400s; duty cycle 2%. ? this is only applied to to-220a package d 2 pak tape & reel information 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. ? this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 9/00 data and specifications subject to change without notice. this product has been designed and qualified for the automotive [q101] (IRF634N), industrial (IRF634Ns and IRF634Nl) market. qualification standards can be found on irs web site.

▲Up To Search▲

Price & Availability of IRF634N

	To Download IRF634N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .